PART |
Description |
Maker |
EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
EIA1011-4P EIB1011-4P |
10.7-11.7GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system
|
Mitsubishi
|
RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
SP8855D SP8855DIGHCAR SP8855DKGHCAR |
1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER 1.7GHz Parallel Load Professional Synthesizer
|
Zarlink Semiconductor Inc.
|
HRC1234W |
Absorbent Glass mat technology for efficient gas recombinatino
|
B. B. Battery Co., Ltd.
|
33472-0880 |
MX150 2X4 RECEPTACLE SEALED ASSEMBLY MAT SEAL
|
Molex Electronics Ltd.
|